Analysis and Design of Capacitive Voltage Distribution Stacked MOS Millimeter-Wave Power Amplifiers

Stacked MOS power amplifiers (PA) are commonly used in SOI nodes but also have the potential to be realized bulk CMOS nodes. In this paper they analyzed millimeter wave regimes. The study focuses on key limiting factors and particular optimum number of transistors from which performance parameters such as maximum possible operating frequency, output power, efficiency achieved. Based analysis, design trade-offs stacked PAs presented. frequency dependency load presented each stack is express overall mentioned PA topologies a new optimization method. Additionally, it shown how optimal variations translate into amplitude-to-amplitude/phase (AM-AM/PM) conversion distortions. validity analysis examined against simulations. simulations performed based 8M1P 28nm technology electromagnetic ADS Momentum.